A Light-impact Model for p-type and n-type poly-Si TFTs

A Light-impact Model for p-type and n-type poly-Si TFTs

Siskos, Stylianos/ Dimitriadis, Charalampos/ Picos, Rodrigo/ Papadopoulos, Nikolaos/ Hatzopoulos, Alkiviadis/ Papakostas, Dimitrios/ Παπακώστας, Δημήτριος/ Χατζόπουλος, Αλκιβιάδης/ Σίσκος, Στυλιανός/ Δημητριάδης, Χαράλαμπος/ Παπαδόπουλος, Νικόλαος

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DC Field	Value	Language
dc.contributor.author	Siskos, Stylianos	el
dc.contributor.author	Dimitriadis, Charalampos	el
dc.contributor.author	Picos, Rodrigo	el
dc.contributor.author	Papadopoulos, Nikolaos	el
dc.contributor.author	Hatzopoulos, Alkiviadis	el
dc.contributor.author	Papakostas, Dimitrios	el
dc.contributor.other	Παπακώστας, Δημήτριος	el
dc.contributor.other	Χατζόπουλος, Αλκιβιάδης	el
dc.contributor.other	Σίσκος, Στυλιανός	el
dc.contributor.other	Δημητριάδης, Χαράλαμπος	el
dc.contributor.other	Παπαδόπουλος, Νικόλαος	el
dc.date.accessioned	2015-07-06T10:57:44Z	el
dc.date.accessioned	2018-02-28T16:16:43Z	-
dc.date.available	2015-07-06T10:57:44Z	el
dc.date.available	2018-02-28T16:16:43Z	-
dc.date.issued	2009-07	el
dc.identifier	10.1109/JDT.2009.2015898	el
dc.identifier.citation	Journal: Journal of Display Technology, vol.5, no.7, 2009	el
dc.identifier.citation	Papakostas, D., Hatzopoulos, A., Papadopoulos, N., Dimitriadis, C. and Picos, R. (2009). A Light-impact Model for p-type and n-type poly-Si TFTs. Journal of Display Technology [online]. 5(7), pp.265-272	el
dc.identifier.issn	1551-319X	el
dc.identifier.uri	http://195.251.240.227/jspui/handle/123456789/10038	-
dc.description	Δημοσιεύσεις μελών--ΣΤΕΦ--Τμήμα Ηλεκτρονικών Μηχανικών,2009	el
dc.description.abstract	This paper introduces and verifies a new light-impact model (LIM) for both p-type and n-type polycrystalline thin-film transistors (poly-Si TFTs). The ratio of the produced current under a specific light intensity (Id) over the dark current (Idark) is calculated. The new model has been also implemented in the circuit simulation program HSPICE. Comparative results between measurements and simulated characteristics are presented for different sizes of widths/lengths, different values of the Vds and Vgs voltages and of light intensities.	el
dc.language.iso	en	el
dc.publisher	IEEE	el
dc.rights	Το τεκμήριο πιθανώς υπόκειται σε σχετική με τα Πνευματικά Δικαιώματα νομοθεσία	el
dc.rights	This item is probably protected by Copyright Legislation	el
dc.source.uri	https://www.osapublishing.org/jdt/home.cfm	el
dc.subject	Elemental semiconductors	el
dc.subject	Spice	el
dc.subject	Silicon	el
dc.subject	Thin film transistors	el
dc.title	A Light-impact Model for p-type and n-type poly-Si TFTs	el
dc.type	Article	el
heal.type	other	el
heal.type.en	Other	en
heal.dateAvailable	2018-02-28T16:17:43Z	-
heal.language	el	el
heal.access	free	el
heal.recordProvider	ΤΕΙ Θεσσαλονίκης	el
heal.fullTextAvailability	false	el
heal.type.el	Άλλο	el
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A Light-impact Model for p-type and n-type poly-Si TFTs