Modeling the impact of light on the performance of polycrystalline thin-film transistors at the sub-threshold region

Hatzopoulos, Alkiviadis/ Siskos, Stylianos/ Dimitriadis, Charalampos/ Papadopoulos, Nikolaos/ Papakostas, Dimitrios/ Παπακώστας, Δημήτριος/ Χατζόπουλος, Αλκιβιάδης/ Σίσκος, Στυλιανός/ Παπαδόπουλος, Νικόλαος/ Δημητριάδης, Χαράλαμπος


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dc.contributor.authorHatzopoulos, Alkiviadisel
dc.contributor.authorSiskos, Stylianosel
dc.contributor.authorDimitriadis, Charalamposel
dc.contributor.authorPapadopoulos, Nikolaosel
dc.contributor.authorPapakostas, Dimitriosel
dc.contributor.otherΠαπακώστας, Δημήτριοςel
dc.contributor.otherΧατζόπουλος, Αλκιβιάδηςel
dc.contributor.otherΣίσκος, Στυλιανόςel
dc.contributor.otherΠαπαδόπουλος, Νικόλαοςel
dc.contributor.otherΔημητριάδης, Χαράλαμποςel
dc.date.accessioned2015-07-16T09:01:10Zel
dc.date.accessioned2018-02-28T16:16:46Z-
dc.date.available2015-07-16T09:01:10Zel
dc.date.available2018-02-28T16:16:46Z-
dc.date.issued2006-05el
dc.identifierdoi:10.1016/j.mejo.2006.07.014el
dc.identifier.citationJournal: Microelectronics Journal, vol.37, no.11, 2006el
dc.identifier.citationPapakostas, D., Hatzopoulos, A., Papadopoulos, N., Siskos, S. and Dimitriadis, C. (2006). Modeling the impact of light on the performance of polycrystalline thin-film transistors at the sub-threshold region. Microelectronics Journal [online]. 37(11), pp.1313-1320. Διαθέσιμο σε: http://www.sciencedirect.com/science/article/pii/S0026269206001558 [Ανακτήθηκε 19 Ιουλίου 2015]el
dc.identifier.citationInternational Symposium on Circuits and Systems, Kos, 2006el
dc.identifier.issn0026-2692el
dc.identifier.urihttp://195.251.240.227/jspui/handle/123456789/10060-
dc.descriptionΔημοσιεύσεις μελών--ΣΤΕΦ--Τμήμα Ηλεκτρονικών Μηχανικών,2006el
dc.description.abstractThe impact of the light illumination on the drain current of polycrystalline silicon thin-film transistors (TFT) is studied in this work. The increase of the output current as a result of raised light intensity is modeled, based on measured experimental data for different Vds and Vgs values and transistor sizes W/L. The proposed model has been verified against the measurements and the simulated output characteristics give a good approximation in the sub-threshold region.el
dc.language.isoenel
dc.publisherElsevierel
dc.relation.isbasedon2006 International Symposium on Circuits and Systemsel
dc.rightsThis item is probably protected by Copyright Legislationel
dc.rightsΤο τεκμήριο πιθανώς υπόκειται σε σχετική με τα Πνευματικά Δικαιώματα νομοθεσίαel
dc.source.urihttp://www.sciencedirect.com/science/journal/00262692/37/11el
dc.titleModeling the impact of light on the performance of polycrystalline thin-film transistors at the sub-threshold regionel
dc.typeConference articleel
heal.typeotherel
heal.type.enOtheren
heal.dateAvailable2018-02-28T16:17:46Z-
heal.languageelel
heal.accessfreeel
heal.recordProviderΤΕΙ Θεσσαλονίκηςel
heal.fullTextAvailabilityfalseel
heal.type.elΆλλοel
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