A New Light-Impact Model for p-type and n-type poly-TFT

Abstract

This paper introduces and verifies a new light-impact model (LIM) for both p-type and n-type polycrystalline thin-film transistors (poly-Si TFTs). The ratio of the produced current under a specific light intensity $(I_{d})$ over the dark current $(I_{\rm dark})$ is calculated. The new model has been also implemented in the circuit simulation program HSPICE. Comparative results between measurements and simulated characteristics are presented for different sizes of widths/lengths, different values of the $V_{\rm ds}$ and $V_{\rm gs}$ voltages and of light intensities.