Using the Light-impact Model for p-type and n-type poly-TFT in Circuits
Papakostas, Dimitrios/ Picos, Rodrigo/ Dimitriadis, Charalampos/ Papadopoulos, Nikolaos/ Παπακώστας, Δημήτριος/ Παπαδόπουλος, Νικόλαος/ Δημητριάδης, Χαράλαμπος
| Institution and School/Department of submitter: | ΤΕΙ Θεσσαλονίκης |
| Keywords: | Thin film transistors;Dark conductivity;Optical feedback;Semiconductor device models |
| Issue Date: | Jun-2011 |
| Publisher: | IEEE |
| Citation: | Papakostas, D., Picos, R., Dimitriadis, C. and Papadopoulos, N. (2011). Using the Light-impact Model for p-type and n-type poly-TFT in Circuits. In: International Conference Mixed Design of Integrated Circuits: conference proceedings, Gliwice, 2010. Gliwice: IEEE, pp.113-118. International Conference Mixed Design of Integrated Circuits and Systems, Gliwice, 2011 |
| Abstract: | This paper describes and verifies a light impact model (LIM) for both p-type and n-type poly TFTs. At first the ratio of the produced current under a specific light intensity versus the `dark' current is calculated. Next, comparative results between measurements and simulated characteristics are presented for different sizes of W/L, different values of the Vds, Vgs voltages and of light intensities. Finally, the application of the LIM in the simulation of an optical-feedback driver is given. |
| Description: | Δημοσιεύσεις μελών--ΣΤΕΦ--Τμήμα Ηλεκτρονικών Μηχανικών, 2011 |
| URI: | http://195.251.240.227/jspui/handle/123456789/10090 |
| ISBN: | 978-1-4577-0304-1 |
| Appears in Collections: | Δημοσιεύσεις σε Περιοδικά |
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