A Light-impact Model for p-type and n-type poly-Si TFTs

Abstract

This paper introduces and verifies a new light-impact model (LIM) for both p-type and n-type polycrystalline thin-film transistors (poly-Si TFTs). The ratio of the produced current under a specific light intensity (Id) over the dark current (Idark) is calculated. The new model has been also implemented in the circuit simulation program HSPICE. Comparative results between measurements and simulated characteristics are presented for different sizes of widths/lengths, different values of the Vds and Vgs voltages and of light intensities.